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MJE13003G

产品分类: 三极管(BJT)
厂牌: ON SEMICONDUCTOR
产品描述: NPN 1.4W 9V 100V 400V 1.5A TO-126 通孔安装 7.74mm*2.66mm*11.04mm
供应商型号: LDL-MJE13003G
供应商: 海外现货
标准整包数: 1
ON SEMICONDUCTOR 三极管(BJT) MJE13003G

MJE13003G概述

    # MJE13003 Silicon Power Transistor Technical Overview
    Product Introduction
    The MJE13003 is an advanced NPN silicon power transistor designed for high-voltage, high-speed switching applications. Specifically tailored for inductive circuits, this transistor emphasizes fall time performance, making it ideal for critical-switching scenarios. Its core applications span a variety of industries, including switching regulators, inverters, motor controls, solenoid/relay drivers, and deflection circuits. These applications require precise control and quick response times, where the MJE13003 excels.
    Technical Parameters
    The MJE13003 features robust technical specifications designed to meet demanding operational requirements:
    - Collector-Emitter Voltage (VCEO): 400 Vdc (max)
    - Collector-Emitter Voltage (VCEV): 700 Vdc (max)
    - Collector Current (IC): Continuous - 1.5 A, Peak - 3 A
    - Base Current (IB): Continuous - 0.75 A, Peak - 1.5 A
    - Emitter Current (IE): Continuous - 2.25 A, Peak - 4.5 A
    - Total Power Dissipation (@TA=25°C): 1.4 W
    - Total Power Dissipation (@TC=25°C): 40 W
    - Operating Temperature Range: -65°C to +150°C
    - Thermal Resistance (Junction-to-Case): 3.12°C/W
    - Thermal Resistance (Junction-to-Ambient): 89°C/W
    Product Features and Advantages
    The MJE13003 offers several unique advantages:
    - Reverse-Biased Safe Operating Area (SOA) with Inductive Loads: Maintains reliability and safety under challenging operating conditions.
    - Fast Fall Time: Optimized for switching speeds as low as 290 ns at 1 A, 100°C, ensuring superior performance in high-frequency applications.
    - High Blocking Voltage: Capable of withstanding up to 700 V, making it suitable for a wide range of power electronics.
    - Enhanced Reliability: Designed for long-term reliability even under extreme temperature conditions.
    Application Cases and Usage Recommendations
    The MJE13003 is extensively used in power electronics requiring fast switching. Some notable applications include:
    - Switching Regulators: Ideal for step-down converters due to its low ON resistance and fast switching capabilities.
    - Motor Control: Offers excellent performance in motor drives, enabling smooth and efficient operation.
    - Deflection Circuits: Provides the necessary precision and reliability for applications like CRT monitors and TVs.
    Usage Recommendations:
    - Ensure proper heat sinking to avoid excessive thermal buildup.
    - Use appropriate external components for noise suppression in high-frequency circuits.
    Compatibility and Support
    The MJE13003 is compatible with a variety of complementary electronic components, facilitating easy integration into existing designs. On Semiconductor provides comprehensive support through its documentation and technical resources, ensuring users have access to the latest updates and best practices.
    Common Issues and Solutions
    Here are some typical issues users might encounter and their solutions:
    - Problem: High thermal resistance leading to overheating.
    - Solution: Implement efficient heat sinks and ensure proper airflow.
    - Problem: Unexpected failures under peak current conditions.
    - Solution: Verify current-limiting measures and monitor circuit parameters regularly.
    Summary and Recommendation
    The MJE13003 is a high-performance silicon power transistor offering excellent reliability and efficiency. Its ability to handle high voltages, rapid switching speeds, and broad temperature ranges makes it a standout choice for a variety of power electronics applications. Given its robust design and support from On Semiconductor, we highly recommend the MJE13003 for engineers seeking dependable performance in critical power management scenarios.

MJE13003G参数

参数
集电极截止电流 -
VCBO-最大集电极基极电压 100V
最大集电极发射极饱和电压 3@ 500mA,1.5A
VEBO-最大发射极基极电压 9V
VCEO-集电极-发射极最大电压 400V
配置 独立式
晶体管类型 NPN
最大功率耗散 1.4W
集电极电流 1.5A
不同 Ib,Ic 时的 Vce 最大饱和值 -
长*宽*高 7.74mm*2.66mm*11.04mm
通用封装 TO-126
安装方式 通孔安装
应用等级 工业级
零件状态 停产
包装方式 散装

MJE13003G厂商介绍

ON Semiconductor(安森美半导体)是一家全球领先的半导体供应商,总部位于美国亚利桑那州菲尼克斯。公司成立于1999年,由摩托罗拉的半导体部门拆分而来,专注于提供广泛的半导体解决方案。

ON Semiconductor的主营产品包括电源管理、模拟、传感器和连接解决方案。产品分类主要包括:

1. 电源管理:包括电源模块、电源管理IC、电池管理等,广泛应用于消费电子、工业、汽车等领域。
2. 模拟:包括放大器、数据转换器、接口等,应用于通信、医疗、工业控制等领域。
3. 传感器:包括图像传感器、环境传感器、运动传感器等,应用于汽车、工业、消费电子等领域。
4. 连接解决方案:包括以太网、无线通信、接口等,应用于通信、工业、汽车等领域。

ON Semiconductor的优势在于:

1. 技术创新:公司持续投入研发,拥有多项专利技术,为客户提供高性能、高可靠性的半导体解决方案。
2. 产品多样性:产品线丰富,覆盖多个应用领域,满足客户的多样化需求。
3. 客户服务:公司在全球设有多个销售和技术支持中心,为客户提供及时、专业的服务。
4. 供应链管理:公司在全球设有多个生产基地,确保产品的稳定供应和质量控制。

MJE13003G数据手册

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ON SEMICONDUCTOR 三极管(BJT) ON SEMICONDUCTOR MJE13003G MJE13003G数据手册

MJE13003G封装设计

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价格梯度 中国香港交货 内地交货(含增值税)
1+ $ 20.891 ¥ 175.0666
库存: 475
起订量: 32 增量: 1
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最小起订量为:1
合计: ¥ 175.06
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