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W29N01HVBINA TR

产品分类: 闪存(Flash)
厂牌: WINBOND/台湾华邦
产品描述: 128MB 128 M x 8 1.65V 35mA 1.95V 133MHz DTR,QPI,SPI-Quad I/O 8bit VFBGA-63 贴片安装,黏合安装
供应商型号: W29N01HVBINA TR VFBGA-63(9X11)
供应商: 期货订购
标准整包数: 2500
WINBOND/台湾华邦 闪存(Flash) W29N01HVBINA TR

W29N01HVBINA TR概述

    # W29N01HV NAND Flash Memory Comprehensive Guide
    Product Introduction
    The W29N01HV is a high-performance 1G-bit NAND Flash memory designed for embedded systems requiring limited space, pin count, and power consumption. It serves as an ideal solution for tasks such as code shadowing to RAM, solid-state storage applications, and media data storage including voice, video, text, and images. With its versatile features and compatibility, it caters to industries demanding robust memory solutions.
    Operating on a single 2.7V to 3.6V power supply, the W29N01HV offers active current consumption as low as 25mA and standby current at 10µA (typical), making it energy-efficient. The total memory array spans 138,412,032 bytes, arranged into 1,024 erasable blocks of 135,168 bytes each. Each block comprises 64 programmable pages of 2,112 bytes, with 2,048 bytes allocated for the main data storage and 64 bytes reserved for the spare data area (used primarily for error correction).
    Main Applications:
    - Embedded Systems: Particularly beneficial where memory efficiency and minimal footprint are critical.
    - Code Shadowing: Suitable for transferring firmware to RAM for faster execution.
    - Media Storage: Ideal for voice, video, and photo data storage.
    Technical Specifications
    The following technical parameters outline the key performance aspects of the W29N01HV:
    | Parameter | Value |

    | Density | 1G-bit (128MB) |
    | Voltage Range | 2.7V - 3.6V |
    | Bus Width | 8-bit |
    | Random Read Time | 25µs |
    | Sequential Read Cycle | 25ns |
    | Page Program Time | 250µs (typ.) |
    | Block Erase Time | 2ms (typ.) |
    | Endurance | 100,000 cycles |
    | Data Retention | 10 years |
    Electrical Characteristics:
    - Absolute Maximum Ratings:
    Vcc Range: 2.7V to 3.6V
    Power-Up Timing: Vcc rising to operational level within 100ms
    - AC Timing Characteristics:
    Command, Address, and Data Input: Up to 30ns
    Operation Timing: Up to 35ns
    Product Features and Advantages
    The W29N01HV stands out with several unique features that enhance its market competitiveness:
    1. High-Density Storage: Offers 1G-bit density in a compact format.
    2. Low Power Consumption: Low active current and standby modes optimize battery life.
    3. Advanced ECC Support: Utilizes a 1bit/528-byte ECC mechanism to ensure data integrity.
    4. Wide Operating Temperature Range: Supports -40°C to 85°C, making it suitable for harsh environments.
    5. Versatile Packaging Options: Available in 48-pin TSOP1, 48-ball VFBGA, and 63-ball VFBGA packages.
    These features make the W29N01HV an excellent choice for applications requiring reliable, efficient, and high-speed data storage.
    Application Case Studies and Usage Recommendations
    The W29N01HV is widely adopted in various scenarios due to its robust design and capabilities:
    Application Example:
    - Smart Home Devices: For storing application firmware and user settings.
    - Medical Equipment: Used for storing patient records and operational data.
    - Automotive Electronics: Suitable for data logging and entertainment systems.
    Usage Recommendations:
    - Ensure proper voltage regulation to maintain optimal performance.
    - Implement advanced ECC mechanisms for error detection and correction.
    - Optimize power management by leveraging the low standby current feature.
    Compatibility and Support
    The W29N01HV supports the standard NAND flash memory interface with a multiplexed 8-bit bus. Its control signals (CLE, ALE, #CE, #RE, #WE) facilitate seamless integration with existing hardware. Additionally, the device supports multiple packaging options, including custom configurations upon r

W29N01HVBINA TR参数

参数
最小工作供电电压 1.65V
组织 128 M x 8
数据总线宽度 8bit
接口类型 DTR,QPI,SPI-Quad I/O
存储容量 128MB
最大供电电流 35mA
最大时钟频率 133MHz
最大工作供电电压 1.95V
通用封装 VFBGA-63
安装方式 贴片安装,黏合安装
零件状态 在售
包装方式 卷带包装

W29N01HVBINA TR数据手册

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价格梯度 中国香港交货 内地交货(含增值税)
2500+ ¥ 19.5696
库存: 25000
起订量: 2500 增量: 2500
交货地:
最小起订量为:2500
合计: ¥ 48924
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