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A2T27S020GNR1

产品分类: 场效应管(MOSFET)
厂牌: NXP SEMICONDUCTORS
产品描述: POWER LDMOS TRANSISTOR 400-2700 MHz, 2.5 W AVG., 28 V
供应商型号: QNF-A2T27S020GNR1
供应商: NXP直供
标准整包数: 500
NXP SEMICONDUCTORS 场效应管(MOSFET) A2T27S020GNR1

A2T27S020GNR1概述

    A2T27S020NR1/A2T27S020GNR1 RF Power LDMOS Transistors: Comprehensive Overview
    1. Product Introduction
    The A2T27S020NR1 and A2T27S020GNR1 are high-performance RF Power LDMOS transistors manufactured by NXP Semiconductors. These devices are designed specifically for cellular base station applications, supporting a wide frequency range of 400 to 2700 MHz. Utilizing N-channel enhancement-mode lateral MOSFET technology, they deliver robust performance for modern wireless communication systems, particularly for applications like W-CDMA.
    Key Features:
    - Frequency range: 400 MHz to 2700 MHz.
    - Power output: Up to 2.5 W average power per channel.
    - Gate-source voltage range: Enhanced for better Class C operation.
    - Designed to work with digital predistortion error correction systems.
    - Optimized as universal broadband drivers.
    These transistors are ideal for applications requiring high power efficiency and reliable operation in challenging RF environments.
    2. Technical Parameters
    Below are the key technical specifications extracted from the product's data sheet:
    | Parameter | Min | Typ | Max | Unit |

    | Frequency Range | 400 2700 | MHz |
    | Drain Efficiency (ηD) 19.4 | 20.8 | % |
    | Output Peak-to-Average Ratio (PAR) 8.8 | 9.2 | dB |
    | Adjacent Channel Power Ratio (ACPR) -42.0 | dBc |
    | Input Return Loss (IRL) -17 | -5 | dB |
    | Thermal Resistance (RθJC) 1.6 °C/W |
    | Max Junction Temperature (TJ) 225 °C |
    3. Product Features and Advantages
    The A2T27S020NR1 and A2T27S020GNR1 transistors offer several standout features and advantages:
    1. Wide Operating Frequency Range: Covers 400 MHz to 2700 MHz, making them suitable for various wireless standards such as GSM, WCDMA, and LTE.
    2. Improved Class C Operation: Greater negative gate-source voltage range ensures stable performance under Class C operation.
    3. Digital Predistortion Compatibility: Excellent for systems utilizing digital predistortion techniques to correct amplifier non-linearities.
    4. Broadband Design: Acts as a universal broadband driver, simplifying system integration.
    5. High Drain Efficiency: Delivers efficiency exceeding 20%, crucial for reducing power consumption in cellular infrastructure.
    6. Thermal Management: Low thermal resistance (1.6°C/W) ensures effective heat dissipation when soldered to a heatsink.
    These features make the transistors highly competitive in cost-sensitive yet demanding RF markets.
    4. Application Cases and Usage Suggestions
    The A2T27S0270NR1 and A2T27S020GNR1 are widely applicable in cellular base stations due to their robust performance characteristics. Examples of their usage include:
    1. Base Station Amplifiers: For driving power amplifiers in 2G, 3G, and 4G networks.
    2. Broadband Wireless Access: Suitable for WiMAX and small-cell base stations.
    3. Predistortion Correction Systems: Ideal for digital predistortion correction systems to enhance linearity and efficiency.
    Usage Suggestions:
    - Use a heatsink to maximize thermal performance and ensure long-term reliability.
    - Incorporate proper impedance matching for optimal gain and efficiency.
    - Implement digital predistortion if high linearity is required for the application.
    5. Compatibility and Support
    The transistors are compatible with standard PCB layouts and can be used with NXP’s recommended reference designs. NXP offers comprehensive support, including application notes, engineering bulletins, software tools, and development kits. This ecosystem helps ease the integration process for engineers and designers.
    Additionally, the components are housed in plastic TO-270 p

A2T27S020GNR1参数

参数
Id-连续漏极电流 -
配置 -
通道数量 -
Vds-漏源极击穿电压 -
最大功率耗散 -
Rds(On)-漏源导通电阻 -
Vgs-栅源极电压 -
Ciss-不同 Vds 时的输入最大电容 -
栅极电荷 -
Vgs(th)-栅源极阈值电压 -
FET类型 -
通用封装 TO-270-2
零件状态 在售
包装方式 卷带包装

A2T27S020GNR1厂商介绍

NXP Semiconductors是一家全球领先的半导体公司,总部位于荷兰。公司专注于提供高性能、安全和互联的解决方案,以推动智能生活和智能城市的发展。NXP的产品广泛应用于汽车、工业和物联网(IoT)、移动设备、通信基础设施等多个领域。

主营产品分类包括:
1. 微控制器(MCU):广泛应用于嵌入式系统,如智能家居、工业自动化等。
2. 射频(RF)和无线技术:包括NFC、蓝牙等,用于无线通信和数据传输。
3. 汽车电子:为汽车提供安全、连接和动力管理解决方案。
4. 安全解决方案:包括安全元件和软件,保护数据和交易安全。
5. 分立器件和传感器:用于各种检测和测量应用。

NXP Semiconductors的优势在于:
- 强大的研发能力:持续投入研发,推动技术创新。
- 广泛的产品线:提供多样化的产品,满足不同市场需求。
- 深厚的行业经验:在多个领域拥有丰富的经验和专业知识。
- 全球化布局:在全球范围内设有研发中心和生产基地,为客户提供本地化服务。

A2T27S020GNR1数据手册

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NXP SEMICONDUCTORS 场效应管(MOSFET) NXP SEMICONDUCTORS A2T27S020GNR1 A2T27S020GNR1数据手册

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价格梯度 中国香港交货 内地交货(含增值税)
500+ $ 20.5041 ¥ 174.2851
2500+ $ 20.1761 ¥ 171.4965
5000+ $ 19.684 ¥ 167.3137
库存: 50000
起订量: 500 增量: 500
交货地:
最小起订量为:500
合计: ¥ 87142.55
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